by Vectrawave | 4 Apr 2025
VM209F is a packaged 10W Gallium Nitride (GaN) wideband 2-18GHz 3 stages amplifier. It’s designed specifically with high power gain greater than 21dB. It is manufactured with a 150nm pHEMT GaN process and is especially suited for radar applications. The device...
by Vectrawave | 3 Apr 2025
VM209D is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high power gain of 22dB and wide bandwidth capabilities of 2 to 18GHz. The VM209D delivers 40dBm of saturated output power. This MMIC is manufactured on a 150nm GaN...
by Vectrawave | 3 Apr 2025
VM215Q is a self-biased wideband amplifier operating in the frequency range 2 to 20GHz under 5V. The device is packaged in a 5×5 mm 24 leads Plastic Surface Mount Package (ROHS). This component uses VM215D Vectrawave die. The device has a small signal gain of...
by e-ssentiel | 14 Oct 2024
The VM103D, is a wide band GaAs MMIC: – 5-bit attenuator – Digital control logic The digital control logic allows for parallel data input, so attenuation value may be changed instantaneously. This broadband Attenuator has an LSB of 0.9dB, and controlled by...
by e-ssentiel | 20 Sep 2023
Vectrawave’s VM215D is a gallium arsenide (AsGa) self-biased amplifier designed specifically with high gain and wide bandwidth capabilities 2-20GHz under 5V The device has a small signal gain of 16dB With a 1dB compression output power of 15dBm. The device contains...
