VM088Q

VM088Q

The VM088Q is a packaged power amplifier developed on 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It can provide an output power up to 20W and associated power added efficiency of 30% in pulsed mode. The VM088Q is offered a plastic 48...
VM088D

VM088D

The VM088D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 10.5GHz. The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF...
VM087F

VM087F

The VM087D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 7.5 to 8.5GHz. The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF...
VM087D

VM087D

The VM087D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 7.5 to 8.5GHz. The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF...
VM102F

VM102F

The VM0102D is a High Power Amplifier MMIC operating in the frequency range from 8 GHz to 11GHz. The device delivers more than +40dBm saturated output power, and provides 24dB of small signal gain from 8GHz to 11GHz. The designhas been optimized to provide high...