by e-ssentiel | 20 Jul 2023
The VWA5001165AA is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 2 to 18GHz. The MMIC is developed on a 250nm GaN/SiC process and is internally matched for 50Ω RF...
by e-ssentiel | 20 Jul 2023
The VWA5000083AA is a distributed amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +10dBm of output power at saturation regime, up to 50GHz. And more than +7dBm of output power at 1 dB of gain compression, up to 50GHz. It provides more...
by e-ssentiel | 20 Jul 2023
The VWA5000079AA is a wideband distri- buted amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +20dBm of output power at saturation regime, up to 45GHz and more than +16dBm of output power at 1dB of gain compression, up to 40GHz. It pro-...
by e-ssentiel | 20 Jul 2023
The VWA5000078AA is a wideband distri- buted amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +19dBm of output power at saturation regime, up to 50GHz and more than +16dBm of output power at 1dB of gain compression, up to 30GHz. It pro-...
by e-ssentiel | 20 Jul 2023
The VWA5000062AA is a distributed amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +22dBm of output power at saturation regime, up to 40GHz. And more than +16dBm of output power at 1dB of gain compression, up to 40GHz. It provides 15dB...
