by e-ssentiel | 20 Jul 2023
The VM014D is a distributed ampli- fier designed on a 0.15μm pHEMT process. The device is capable of output voltage up to 8Vpp and has more than +23dBm of out- put power at saturation regime, up to 28GHz. It provides more than +21dBm of output power at 1dB of gain...
by e-ssentiel | 18 Jul 2023
The VM164D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 11GHz. The MMIC is developed on a 250nm GaN/SiC process and is internally matched for 50Ω RF accesses....
by e-ssentiel | 18 Jul 2023
The VWA5001201AA is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 12GHz. The MMIC is developed on a 250nm GaN/SiC process and is internally matched for 50Ω RF...
by e-ssentiel | 18 Jul 2023
The VM101D is a 2 Stages High Power Amplifier MMIC operating in the frequency range from 8 GHz to 11Ghz. The device delivers more than 37dBm saturated output power and provides 22dB of small signal gain from 8GHz to 11GHz. The designhas been optimized to provide high...
by e-ssentiel | 18 Jul 2023
The VWA5001171AA is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 33 to 36GHz. The MMIC is developed on a 150nm GaN/SiC process and is internally matched for 50Ω RF...
