by e-ssentiel | 20 Jul 2023
The VM025D is a distributed amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +16dBm of output power at saturation regime, up to 40GHz. It provides more than +14dBm of output power at 1 dB of gain compression, up to 40GHz.The linear gain...
by e-ssentiel | 20 Jul 2023
The VM015D is a wide band distribu- ted amplifier designed on a 150nm pHEMT pro- cess that operates up to 31GHz, with flat group delay. The device is capable of more than 19 dBm saturated output power, and provides more than 13dB of gain from DC to 27GHz with less...
by e-ssentiel | 20 Jul 2023
The VM014Q is a distributed amplifier designed on a 0.15 μm pHEMT process, packaged in a 5x5mm 24 lead Plastic Surface Mount Package (ROHS). This component uses the VWA50014AA Vectrawave die. The device is capable of more than +21dBm of output power at saturation...
by e-ssentiel | 20 Jul 2023
The VM014D is a distributed ampli- fier designed on a 0.15μm pHEMT process. The device is capable of output voltage up to 8Vpp and has more than +23dBm of out- put power at saturation regime, up to 28GHz. It provides more than +21dBm of output power at 1dB of gain...
by e-ssentiel | 18 Jul 2023
The VM164D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 11GHz. The MMIC is developed on a 250nm GaN/SiC process and is internally matched for 50Ω RF accesses....
