The VWA5000083AA is a distributed amplifier designed on a 0.15μm pHEMT process.
The device is capable of more than +10dBm of output power at saturation regime, up to 50GHz. And more than +7dBm of output power at 1 dB of gain compression, up to 50GHz. It provides more than 8dB of linear gain from DC to 70GHz. The design integrates a VD internal access that’s allow the user to bias the Drain access through the Drain resistor load helping to avoid external Bias-T structure. The supply current is as low as 75mA when operating with VD= +5V.
VM083D
DC to 70GHz / 8dB Gain / 12dBm PSAT
Wideband Distributed Amplifier
Wideband Distributed Amplifier
WIDEBAND AMPLIFIERS
DatasheetFeatures
- Wideband Distributed amplifier pHEMT GaAs MMIC
- Wide band: DC to 70GHz.
- Internal Resistive Drain Biasing System
- Flat group delay.
- 50ΩRF Single ended input and output
- DC coupled In, DC coupled Out
- P1dB >+9dBm DC to 44GHz
- High output PSAT >+12dBm DC to 44GHz
- Small signal gain: >8dB DC to 70GHz
- Nominal Power Supply: 75mA @ +5V
- Chip size: 1.516 x 1.328 x 0.1 (mm)