The VM088Q is a packaged power amplifier developed on 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It can provide an output power up to 20W and associated power added efficiency of 30% in pulsed mode.
The VM088Q is offered a plastic 48 leads 7×7 QFN designed to a surface mount design board.
The VM088Q integrates the VWA5000088AB VectraWave HPA.
VM088Q
8 to 10.5GHz / 40W
GaN/SiC Power Amplifier
GaN/SiC Power Amplifier
POWER AMPLIFIERS > 3W
Features
- Operating frequency range: 8 to 10.5 GHz
- Output Power : >46dBm @Pin=23dBm
- PAE : 35% @Pin=23dBm
- Linear Gain: 29dB
- DC bias: VD=+28V, IDQ=350mA (VG=-2.35V Typ.)
- Plastic QFN : 7mm x 7mm 48 leads