VM209D is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high power gain of 22dB and wide bandwidth capabilities of 2 to 18GHz. The VM209D delivers 40dBm of saturated output power. This MMIC is manufactured on a 150nm GaN on SiC process and is especially suited for radar applications.
The device contains internal DC block and internal drain bias, therefore, no need for external bias-tee.
VM209D
2 to 18GHz - 10W GaN/SiC WideBand Power Amplifier
WIDEBAND AMPLIFIERS
Features
- Frequency range 2 – 18GHz
- Output Power 40dBm @Pin = 18dBm
- PAE 22% @Pin = 18dBm
- Power Gain 22dB @Pin = 18dBm
- Linear Gain 30dB
- DC bias VD = +28V, lDQ = 1.12A,
VG = -1.72V (Typical) - Chip size 3.24 x 3.24 x 0.1 (mm³)