VM209F is a packaged 10W Gallium Nitride (GaN) wideband 2-18GHz 3 stages amplifier. It’s designed specifically with high power gain greater than 21dB.
It is manufactured with a 150nm pHEMT GaN process and is especially suited for radar applications. The device contains internal DC block and internal drain bias, therefore, no need for external bias-tee.
VM209F
2 to 18GHz - 10W GaN/SiC WideBand Power Amplifier
WIDEBAND AMPLIFIERS
Features
- Frequency range 2 – 18GHz
- Output Power 40dBm @Pin = 18dBm
- PAE 20% @Pin = 18dBm
- Power Gain 21dB @Pin = 18dBm
- Linear Gain 30dB
- DC bias VD = +28V, lDQ = 1.12A,
VG = -1.72V (Typical) - Flange Package 11.43 x 17.32 x 3.5 (mm³)