VM088D : 40W X Band GaN/SiC Power Amplifier

The VM088D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 10.5GHz. The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It can provide an output power up to 40W and associated power added efficiency of 38% in pulsed mode.

VM090D : 20W X Band GaN/SiC Power Amplifier

The VM090D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 11GHz.
The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It can provide an output power up to 20W and associated power added efficiency of 40% in pulsed mode.